NON-UNIFORM STATE SPACING IN MULTI-STATE MEMORY ELEMENT FOR LOW-POWER OPERATION

A method of setting multi-state memory elements into at least one low-power state may include receiving a command to cause a memory element to transition into one of three or more states; applying a first signal to the memory element to transition the memory element into the one of the three or more...

Full description

Saved in:
Bibliographic Details
Main Authors CAI, Fuxi, KAMALANATHAN, Deepak, KRISHNAN, Siddarth, CHEVALLIER, Christophe J
Format Patent
LanguageEnglish
French
German
Published 15.05.2024
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A method of setting multi-state memory elements into at least one low-power state may include receiving a command to cause a memory element to transition into one of three or more states; applying a first signal to the memory element to transition the memory element into the one of the three or more states, where the three or more states are evenly spaced in a portion of an operating range of the memory element; receiving a command to cause a memory element to transition into a low-power state; applying a second signal to the memory element to transition the memory element into the low-power state, where the low-power state is outside of the portion of the operating range of the memory element by an amount greater than a space between each of the three or more states.
Bibliography:Application Number: EP20210797838