BISB TOPOLOGICAL INSULATOR WITH SEED LAYER OR INTERLAYER TO PREVENT SB DIFFUSION AND PROMOTE BISB (012) ORIENTATION

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a...

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Main Authors YORK, Brian R, HWANG, Cherngye, LE, Quang, CHEN, Andrew, NGUYEN, Thao A, AHN, Yongchul, GAO, Zheng, HO, Kuok San, LIU, Xiaoyong, JIANG, Hongquan
Format Patent
LanguageEnglish
French
German
Published 08.03.2023
Subjects
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
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Summary:A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.
Bibliography:Application Number: EP20200933488