GALLIUM NITRIDE (GAN) EPITAXY ON PATTERNED SUBSTRATE FOR INTEGRATED CIRCUIT TECHNOLOGY

Gallium nitride (GaN) epitaxy on patterned substrates for integrated circuit technology is described. In an example, an integrated circuit structure includes a material layer (106B) including gallium and nitrogen, the material layer having a first side and a second side opposite the first side. A pl...

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Main Authors FISCHER, Paul, THEN, Han Wui, RADOSAVLJEVIC, Marko, KOIRALA, Pratik, TALUKDAR, Tushar, THOMAS, Nicole, HOFF, Thomas, JUN, Kimin, NORDEEN, Paul
Format Patent
LanguageEnglish
French
German
Published 01.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Gallium nitride (GaN) epitaxy on patterned substrates for integrated circuit technology is described. In an example, an integrated circuit structure includes a material layer (106B) including gallium and nitrogen, the material layer having a first side and a second side opposite the first side. A plurality of fins is on the first side of the material layer, the plurality of fins (104) including silicon. A device layer (108) is on the second side of the material layer, the device layer including one or more GaN-based devices.
Bibliography:Application Number: EP20220186480