P+ OR N+ TYPE DOPING PROCESS FOR SEMICONDUCTORS

A p+ or n+ type doping process for semiconductors, allows to implement a semiconductor with a highly doped surface layer, and it comprises the steps of: providing a substrate made of semiconductor material; depositing on a surface of 5 the substrate made of semiconductor material a thin source layer...

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Bibliographic Details
Main Authors NAPOLI, Daniel Ricardo, NAPOLITANI, Enrico, MAGGIONI, Gianluigi, DE SALVADOR, Davide
Format Patent
LanguageEnglish
French
German
Published 03.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A p+ or n+ type doping process for semiconductors, allows to implement a semiconductor with a highly doped surface layer, and it comprises the steps of: providing a substrate made of semiconductor material; depositing on a surface of 5 the substrate made of semiconductor material a thin source layer made of dopant material acting as dopant source; depositing on said source layer an additional protective surface layer made of semiconductor material; inducing liquefaction of the surface layer at least until the source layer; and cooling down the substrate surface so as to obtain the diffusion of the dopant material.
Bibliography:Application Number: EP20210718614