VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD OF FABRICATING SAME

A Vertical Cavity Surface Emitting Laser (VCSEL) is disclosed which comprises a semiconductor layer structure (12) including a first mirror (13), an outcoupling mirror (14) and an active region (16) between the first mirror (13) and the outcoupling mirror (14). The VCSEL further comprises an electri...

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Bibliographic Details
Main Authors WEIGL, Alexander, GRONENBORN, Stephan
Format Patent
LanguageEnglish
French
German
Published 08.02.2023
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Summary:A Vertical Cavity Surface Emitting Laser (VCSEL) is disclosed which comprises a semiconductor layer structure (12) including a first mirror (13), an outcoupling mirror (14) and an active region (16) between the first mirror (13) and the outcoupling mirror (14). The VCSEL further comprises an electrical contact arrangement (30). A current confinement region (20) surrounds a contiguous area (22) of the layer structure (12), and the electrical contact arrangement (30) is arranged to electrically pump the active region (16) to generate laser emission in a single non-fundamental mode extending over the electrically contiguous area (22). The outcoupling mirror (14) has a first reflectivity in one or more first sub-areas (34) of the contiguous area (22) and a second reflectivity in one or more second sub-areas (36) of the contiguous area (22) outside the one or more first sub-areas (34), wherein the second reflectivity is lower than the first reflectivity and the single non-fundamental mode has single intensity peaks in the one or more first sub-areas (34) and an intensity in the one or more second sub-areas (36) which is lower than 50% of the intensity in the one or more first sub-areas (34). A method of fabricating such a VCSEL is described as well.
Bibliography:Application Number: EP20210189897