QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR

The disclosure relates to a quantum dot light-emitting diode and a fabricating method thereof. The quantum dot light-emitting diode includes a quantum dot layer and an electron transport layer formed on the quantum dot layer. A surface of a side of the quantum dot layer close to the electron transpo...

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Bibliographic Details
Main Author NIE, Zhiwen
Format Patent
LanguageEnglish
French
German
Published 08.11.2023
Subjects
ELECTRICITY
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Summary:The disclosure relates to a quantum dot light-emitting diode and a fabricating method thereof. The quantum dot light-emitting diode includes a quantum dot layer and an electron transport layer formed on the quantum dot layer. A surface of a side of the quantum dot layer close to the electron transport layer bonds to an ester substance.
Bibliography:Application Number: EP20210893828