SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

• Main Authors: HO, Chihon, HE, Ran
• Format: Patent
• Language: English; French; German
• Published: 31.05.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device may include a first wafer (300), a second wafer (400), and a contact plug (360). The first wafer (300) may include a first dielectric layer (320), and the first dielectric layer (320) has a first connection pad (330). The second wafer (400) is bonded to the first wafer (300), the second wafer (400) includes a second dielectric layer (420), and the second dielectric layer (420) has a second connection pad (430). The contact plug (360) is made of a conductive material filled in a vertical through hole, and is configured to electrically connect the first connection pad (330) and the second connection pad (430). The vertical through hole is a through hole that is formed through etching and that passes through the first wafer (300) and partially passes through the second wafer (400) to an upper surface and/or a sidewall of the second connection pad (430). The first connection pad (330) is located in the vertical through hole, and etching is not performed on the first dielectric layer (320) located below the first connection pad (330). The contact plug (360) may be in contact with the second connection pad (430) from a periphery of the first connection pad (330), to implement a reliable connection between the contact plug (360) and the second connection pad (430) by using a simple process.