SPACER SELF-ALIGNED VIA STRUCTURES FOR GATE CONTACT OR TRENCH CONTACT

• Main Authors: HASAN, Mohammad, WALLACE, Charles H, JOACHIM, Robert, CHANG, Tsuan-Chung, LIU, Shengsi, GULER, Leonard P, GHANI, Tahir
• Format: Patent
• Language: English; French; German
• Published: 07.12.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Spacer self-aligned via structures for gate contact or trench contact are described. In an example, an integrated circuit structure includes a plurality of gate structures above a substrate. A plurality of conductive trench contact structures is alternating with the plurality of gate structures. The integrated circuit structure also includes a plurality of dielectric spacers, a corresponding one of the plurality of dielectric spacers between adjacent ones of the plurality of gate structures and the plurality of conductive trench contact structures, wherein the plurality of dielectric spacers protrudes above the plurality of gate structures and above the plurality of conductive trench contact structures. A conductive structure is in direct contact with one of the plurality of gate structures or with one of the plurality of conductive trench contact structures.