METHODS AND APPARATUS FOR CARBON COMPOUND FILM DEPOSITION

• Main Authors: LIANG, Qiwei, YIEH, Ellie Y, CHEN, Erica, ALEX, Nithin Thomas, NEMANI, Srinivas D, YING, Chentsau Chris
• Format: Patent
• Language: English; French; German
• Published: 17.01.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method and apparatus for depositing a carbon compound on a substrate includes using an inductively coupled plasma (ICP) chamber with a chamber body, a lid, an interior volume, a pumping apparatus, and a gas delivery system and a pedestal for supporting a substrate disposed within the interior volume of the ICP chamber, the pedestal has an upper portion formed from aluminum nitride with an upper surface that is configured to support and heat a substrate with embedded heating elements and a lower portion with a tube-like structure formed from aluminum nitride that is configured to support the upper portion and house electrodes for supplying power to the embedded heating elements of the upper portion, and the pedestal is configured to heat the substrate during deposition of a carbon compound film.