NITRIDE SEMICONDUCTOR TRANSISTOR AND ELECTRONIC DEVICE

• Main Authors: CHEN, Zhibin, JIANG, Qimeng
• Format: Patent
• Language: English; French; German
• Published: 21.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

This application provides a nitride semiconductor transistor and an electronic device. The nitride semiconductor transistor includes a substrate structure, a nitride epitaxial structure, and a functional electrode layer. The substrate structure includes a heavily doped P-type substrate and a lightly doped P-type epitaxial layer that are disposed through stacking, and a side that is of the lightly doped P-type epitaxial layer and that is away from the heavily doped P-type substrate extends towards the heavily doped P-type substrate to form an N-type region. The nitride epitaxial structure includes a nitride buffer layer, a barrier layer, and a P-type nitride layer that are successively formed on the lightly doped P-type epitaxial layer. The functional electrode layer includes a source, a drain, a gate, and an isolation layer, and a first isolation portion corresponds to the N-type region and penetrates through the barrier layer and the nitride buffer layer to be in contact with the lightly doped P-type epitaxial layer. A metal connector is formed in the first isolation portion, and the metal connector penetrates through the first isolation portion to connect the drain and the N-type region. The nitride semiconductor transistor is equivalent to a built-in PN-type diode, and forms a current discharge channel, to improve device reliability.