MATERIAL COMPRISING A STACK WITH FINE DIELECTRIC SUBLAYER OF ZINC OXIDE AND METHOD FOR DEPOSITING SAID MATERIAL

The invention concerns a material comprising a substrate (30) coated on one face (29) with a stack of thin layers (14) comprising at least one functional metallic layer (140) and including: - a sublayer of zinc oxide, ZnO (129) of between 0.3 and 5.0 nm; - a dielectric sublayer of silicon-zirconium...

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Bibliographic Details
Main Authors GUIMARD, Denis, ORVEN, Matthieu, BARRES, Thomas
Format Patent
LanguageEnglish
French
German
Published 05.10.2022
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Summary:The invention concerns a material comprising a substrate (30) coated on one face (29) with a stack of thin layers (14) comprising at least one functional metallic layer (140) and including: - a sublayer of zinc oxide, ZnO (129) of between 0.3 and 5.0 nm; - a dielectric sublayer of silicon-zirconium nitride SixNyZrZ (127) underneath and in contact with the sublayer of zinc oxide ZnO (129), of between 5.0 and 50.0 nm; and - a primary dielectric sublayer of silicon nitride Si3N4 (125) underneath and in contact with the sublayer of silicon-zirconium nitride SixNyZrZ (127), of between 5.0 and 50.0 nm.
Bibliography:Application Number: EP20200812044