FERROELECTRIC THIN FILM, ELECTRONIC ELEMENT USING SAME, AND METHOD FOR MANUFACTURING FERROELECTRIC THIN FILM

• Main Authors: FUNAKUBO Hiroshi, AKIYAMA Morito, YASUOKA Shinnosuke, SHIMIZU Takao, UEHARA Masato, YAMADA Hiroshi
• Format: Patent
• Language: English; French; German
• Published: 20.03.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; ARTIFICIAL STONE; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; COMPOUNDS THEREOF; CONCRETE; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; LIME, MAGNESIA; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; REFRACTORIES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

It is an object to provide a ferroelectric thin film having much higher ferroelectric properties than conventional Sc-doped ferroelectric thin film constituted by aluminum nitride and also having stability when applied to practical use, and also to provide an electronic device using the same.There are provided a ferroelectric thin film represented by a chemical formula M11-XM2XN, wherein M1 is at least one element selected from Al and Ga, M2 is at least one element selected from Mg, Sc, Yb, and Nb, and X is within a range of 0 or more and 1 or less, and also an electronic device using the same.