LIGHT-EMITTING DIODE GRAIN STRUCTURE WITH MULTIPLE CONTACT POINTS

• Main Authors: Huang, Kuo-Hsin, CHEN, Fu-Bang
• Format: Patent
• Language: English; French; German
• Published: 23.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a light-emitting diode grain structure with multiple contact points, including a P-type electrode (10), a conductive base plate (20), a light-emitting semiconductor layer (30), a plurality of ohmic contact metal points (40, 40A, 40B, 40C), a mesh-structured connection conductive layer (50), a connection point conductive layer (60), and an N-type electrode pad (70) electrically connected to the connection point conductive layer (60). The plurality of ohmic contact metal points (40, 40A, 40B, 40C) is arranged on an N-type semiconductor layer (33) in a spreading manner, and is contacted with the N-type semiconductor layer (33). No ohmic contact is formed between the connection conductive layer (50) and the N-type semiconductor layer (33). Accordingly, the metal points (40, 40A, 40B, 40C) and the connection conductive layer (50) can disperse a current, reduce a shading area, and improve the luminous efficiency and component reliability; and uniform light emission from a surface facilitates the light distribution uniformity of an original light source and exciting light after phosphor is coated.