DEVICE WITH TWO LEVELS OF STACKED ELECTROSTATIC CONTROL GATES

Quantum device, including:a semiconductor portion comprising several first quantum dot regions each disposed between at least two second tunnel barrier regions and placed next to the two second regions;first gates each comprising a first conductive portion;second gates each comprising at least a sec...

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Bibliographic Details
Main Authors VINET, Maud, BERTRAND, Benoit, NIQUET, Yann-Michel, MARTINEZ I DIAZ, Biel
Format Patent
LanguageEnglish
French
German
Published 06.09.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
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Summary:Quantum device, including:a semiconductor portion comprising several first quantum dot regions each disposed between at least two second tunnel barrier regions and placed next to the two second regions;first gates each comprising a first conductive portion;second gates each comprising at least a second conductive portion and a second dielectric disposed between the second conductive portion and the first conductive portion of one of the first gates, such that each of the first gates is disposed between the semi-conductor portion and one of the second gates;wherein the first and second gates are disposed above the first regions or above the second regions, the second gates being solely located in a vertical extension of the first gates.
Bibliography:Application Number: EP20220160886