PRECURSORS AND FLOWABLE CVD METHODS FOR MAKING LOW-K FILMS TO FILL SURFACE FEATURES
A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about -20 °C to about 400 °C; introducing into the reactor at least one silicon-containing compound havi...
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Main Authors | , , , , |
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Format | Patent |
Language | English French German |
Published |
24.07.2024
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Subjects | |
Online Access | Get full text |
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Summary: | A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about -20 °C to about 400 °C; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties. |
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Bibliography: | Application Number: EP20220160332 |