X?GROWTH OF ALGA 1-X?AS, AL 0.5?IN 0.5?P, AND AL X?GA (0.5-X?)IN 0.5?P BY HYDRIDE VAPOR PHASE EPITAXY USING AN EXTERNAL ALCL 3 ?GENERATOR

• Main Authors: PTAK, Aaron Joseph, SIMON, John David, METAFERIA, Wondwosen Tilahun, SCHULTE, Kevin Louis
• Format: Patent
• Language: English; French; German
• Published: 20.09.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Disclosed herein is the controlled epitaxy of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP by hydride vapor phase epitaxy (HVPE) through use of an external AlCl3 generator.