MEMORY FORMING METHOD AND MEMORY

• Main Authors: ZHANG, Lingguo, KWON, Thomas Jongwan, ZHOU, Xiangui, LIU, Xu, ZHANG, Lintao
• Format: Patent
• Language: English; French; German
• Published: 28.12.2022
• Subjects: ELECTRICITY

Some embodiments of the present application provide a memory forming method and a memory. The memory forming method includes: providing a substrate (100) , wherein the substrate includes at least word line structures (102) and active regions (101), and bottom dielectric layers (110) and bit line contact layers (121) located on a top surface of the substrate (100), the bottom dielectric layer (110) have bit line contact openings (111) exposing the active regions (101) in the substrate (100), and the bit line contact layers (121) cover the bottom dielectric layers (110) and fill the bit line contact openings (111); etching part of the bit line contact layers (121) to form the bit line contact layers (121) of different heights; forming conductive layers (140), top surfaces of the conductive layers (140) being at the same height in a direction perpendicular to an extension direction of the word line structures (102); and the top surfaces of the conductive layers (140) being at different heights in the extension direction of the word line structures (102); forming top dielectric layers (150); and forming discrete bit line structures (200) by etching.