LARGE FIELD RANGE TMR SENSOR USING FREE LAYER EXCHANGE PINNING

A method of fabricating a TMR based magnetic sensor in a Wheatstone configuration includes conducting a first anneal of a magnetic tunnel junction (MTJ) and conducting a second anneal of the MTJ. The MTJ includes a first antiferromagnetic (AFM) pinning layer, a pinned layer over the first AFM pinnin...

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Bibliographic Details
Main Authors WANG, Lei, KAISER, Christian, MAURI, Daniele, ZHENG, Yuankai
Format Patent
LanguageEnglish
French
German
Published 06.07.2022
Subjects
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Summary:A method of fabricating a TMR based magnetic sensor in a Wheatstone configuration includes conducting a first anneal of a magnetic tunnel junction (MTJ) and conducting a second anneal of the MTJ. The MTJ includes a first antiferromagnetic (AFM) pinning layer, a pinned layer over the first AFM pinning layer, an anti-parallel coupled layer over the pinned layer, a reference layer over the anti-parallel coupled layer, a barrier layer over the reference layer, a free layer over the barrier layer, and a second antiferromagnetic pinning layer over the free layer. The first anneal of the MTJ sets the first AFM pinning layer, the pinned layer, the free layer, and the second AFM pinning layer in a first magnetization direction. The second anneal of the MTJ resets the free layer and the second AFM pinning layer in a second magnetization direction. An operating field range of the TMR based magnetic sensor is over ±100 Oe.
Bibliography:Application Number: EP20200857493