POWER SEMICONDUCTOR MODULE, METHOD FOR MANUFACTURING THE SAME AND ELECTRICAL CONVERTER

The disclosure relates to a method for manufacturing a power semiconductor module (34), wherein the power semiconductor module (34) comprises a plurality of power semiconductor devices (10), said method comprising the steps of:a) providing at least one substrate (12) for carrying the plurality of po...

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Bibliographic Details
Main Authors MOHN, Fabian, RIEDEL, Gernot, KICIN, Slavo, SCHUDERER, Jürgen
Format Patent
LanguageEnglish
French
German
Published 10.04.2024
Subjects
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Summary:The disclosure relates to a method for manufacturing a power semiconductor module (34), wherein the power semiconductor module (34) comprises a plurality of power semiconductor devices (10), said method comprising the steps of:a) providing at least one substrate (12) for carrying the plurality of power semiconductor devices (10); andb) placing the plurality of power semiconductor devices (10) on the at least one substrate (12);wherein the method further comprises manufacturing steps as follows:c) measuring, if one or more power semiconductor devices (10) of the plurality of the power semiconductor devices (10) are damaged;d) electrically interconnecting at least a part of the power semiconductor devices (10) comprising at least two power semiconductor devices (10) in a parallel configuration;wherein after the steps c) and d) are realized and in case of one or more power semiconductor devices (10) being a damaged power semiconductor device (10a)the one or more damaged power semiconductor devices (10a) are electrically separated from the non-damaged power semiconductor devices (10b, 10c); andwherein, after the steps c) and d) are realized, at least two of the electrically interconnected power semiconductor devices (10) in the parallel configuration are non-damaged power semiconductor devices (10b, 10c).
Bibliography:Application Number: EP20200216589