AN ENVIRONMENTALLY PROTECTED PHOTONIC INTEGRATED CIRCUIT

The invention relates to an environmentally protected photonic integrated circuit, PIC (1), comprising an indium phosphide-based substrate (2) that is at least partially covered with an epitaxial semiconductor layer (4). The InP-based substrate and/or the epitaxial layer are covered with a layer sta...

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Bibliographic Details
Main Author Hoekstra, Tsjerk Hans
Format Patent
LanguageEnglish
French
German
Published 29.06.2022
Subjects
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
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Summary:The invention relates to an environmentally protected photonic integrated circuit, PIC (1), comprising an indium phosphide-based substrate (2) that is at least partially covered with an epitaxial semiconductor layer (4). The InP-based substrate and/or the epitaxial layer are covered with a layer stack (6) comprising different non-semiconductor layers (7a, 7b). At least a first layer of said layer stack is provided with a through-hole (8a) that is arranged at a predetermined location (9). The InP-based substrate or epitaxial layer being accessible via the through-hole. Said PIC comprising a dielectric protective layer (12) covering said layer stack thereby providing a mechanical coupling structure. Said protective layer is configured to protect the PIC from environmental contaminants.The invention also relates to an opto-electronic system (24) comprising said PIC.
Bibliography:Application Number: EP20200216921