SACRIFICIAL REDISTRIBUTION LAYER IN MICROELECTRONIC ASSEMBLIES HAVING DIRECT BONDING

• Main Authors: Rawlings, Brandon M, Liff, Shawna M, Elsherbini, Adel A, Shakya, Jagat, Craig, David M, Strong, Veronica Aleman, Mueller, Brennen Karl, Streifer, Jeremy Alan, Swan, Johanna M
• Format: Patent
• Language: English; French; German
• Published: 22.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region and coupled to the first microelectronic component by the first and second direct bonding regions, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, and wherein individual first metal contacts in the first direct bonding region are coupled to respective individual second metal contacts in the second direct bonding region; and a void between an individual first metal contact and a respective individual second metal contact.