SPUTTERING TARGET

• Main Authors: MARUKO, Tomohiro, SUZUKI, Yu, OTOMO, Shohei, NAKAMURA, Hironobu
• Format: Patent
• Language: English; French; German
• Published: 04.10.2023
• Subjects: ALLOYS; BASIC ELECTRIC ELEMENTS; CASTING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; FERROUS OR NON-FERROUS ALLOYS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MAKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; METALLURGY; PERFORMING OPERATIONS; POWDER METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; TREATMENT OF ALLOYS OR NON-FERROUS METALS; WORKING METALLIC POWDER

An object of the present disclosure is to provide a sputtering target that has improved conductivity and, for example, improves productivity in forming a film using a DC sputtering device. The sputtering target of the present disclosure includes: an aluminum matrix; and (1) a material or phase containing aluminum and further containing either a rare earth element or a titanium group element or both a rare earth element and a titanium group element or (2) a material or phase containing either a rare earth element or a titanium group element or both a rare earth element and a titanium group element, at a content of 10 to 70 mol% in the aluminum matrix.