PANEL RETARDANCE MEASUREMENT
A method for determining a residual retardance of an LCOS (Liquid Crystal on Silicon) panel includes transmitting a light beam to the LCOS panel at an angle of incidence and measuring an intensity of a reflected light beam. The method includes biasing the LCOS panel in a dark state and measuring a d...
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Main Authors | , , , , , |
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Format | Patent |
Language | English French German |
Published |
27.12.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A method for determining a residual retardance of an LCOS (Liquid Crystal on Silicon) panel includes transmitting a light beam to the LCOS panel at an angle of incidence and measuring an intensity of a reflected light beam. The method includes biasing the LCOS panel in a dark state and measuring a dark state intensity of the reflected light beam. The method also includes biasing the LCOS panel in a bright state, and measuring a bright state intensity of the reflected light beam. A residual retardance of the LCOS panel is determined based on a contrast ratio of the bright state intensity and the dark state intensity. The method can also include selecting a compensator for the LCOS panel based on the residual retardance. |
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Bibliography: | Application Number: EP20200847302 |