METHOD FOR MANUFACTURING AN ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT

In a method for manufacturing an electrostatic discharge protection circuit, an electrostatic discharge device structure (12A) is formed during a front side processing of a semiconductor substrate in a first area. Contact pads (17, 18) are formed on the front side on the electrostatic discharge devi...

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Bibliographic Details
Main Authors Willemen, Joost Adriaan, Schmenn, Andre, Diefenbeck, Klaus
Format Patent
LanguageEnglish
French
German
Published 25.05.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a method for manufacturing an electrostatic discharge protection circuit, an electrostatic discharge device structure (12A) is formed during a front side processing of a semiconductor substrate in a first area. Contact pads (17, 18) are formed on the front side on the electrostatic discharge device structure and in a second area. During back side processing of the semiconductor substrate, a metal connection (14A) between the first electrostatic discharge device structure (12A) and the second area is formed.
Bibliography:Application Number: EP20200209267