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Methods and apparatus for etching a high aspect ratio feature in a stack on a substrate are provided. The feature may be formed in the process of forming a 3D NAND device. Typically, the stack includes alternating layers of material such as silicon oxide and silicon nitride or silicon oxide and poly...

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Bibliographic Details
Main Authors LIPOVSKY, James M, HASSO, Douglas J, GUO, Yinzhong, CYGAN, Ludwik S, JACOBS, Joseph, ESCOBAR MARIN, Carlos A
Format Patent
LanguageEnglish
French
German
Published 23.02.2022
Subjects
ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE
ADHESIVES
AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G
CHEMISTRY
COMPOSITIONS BASED THEREON
DYES
GENERAL PROCESSES OF COMPOUNDING
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL
ORGANIC MACROMOLECULAR COMPOUNDS
PAINTS
POLISHES
THEIR PREPARATION OR CHEMICAL WORKING-UP
USE OF MATERIALS AS ADHESIVES
WORKING-UP
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Summary:Methods and apparatus for etching a high aspect ratio feature in a stack on a substrate are provided. The feature may be formed in the process of forming a 3D NAND device. Typically, the stack includes alternating layers of material such as silicon oxide and silicon nitride or silicon oxide and polysilicon. WF6 is provided in the etch chemistry, which substantially reduces or eliminates problematic sidewall notching. Advantageously, this improvement in sidewall notching does not introduce other tradeoffs such as increased bowing, decreased selectivity, increased capping, or decreased etch rate.
Bibliography:Application Number: EP20200716019