LONG-WAVE INFRARED PHOTODETECTOR STRUCTURES FORMED ON HIGH-INDEX SUBSTRATES

A layered structure used for detecting incident light includes a substrate having a surface with a high Miller index crystal orientation and a superlattice structure formed over the substrate at the surface. The superlattice structure is aligned to the high Miller index crystal orientation and exhib...

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Main Authors LIU, Amy Wing Kwan, FREY, Philip Lee, FURLONG, Mark Justin, KATTNER, Michael Vincent, LUBYSHEV, Dmitri, NELSON, Scott Alan, FASTENAU, Joel Mark
Format Patent
LanguageEnglish
French
German
Published 16.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A layered structure used for detecting incident light includes a substrate having a surface with a high Miller index crystal orientation and a superlattice structure formed over the substrate at the surface. The superlattice structure is aligned to the high Miller index crystal orientation and exhibits a red-shifted long wave infrared response range based on the crystal orientation as compared to a superlattice structure formed over a substrate at a surface with a (100) crystal orientation.
Bibliography:Application Number: EP20200727360