PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY LENGTH

A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

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Bibliographic Details
Main Authors HUANG, Hong-Huei, JAIN, Tapas, BHAGAVAT, Sumeet S, LU, Zheng, TSAI, Feng-Chien
Format Patent
LanguageEnglish
French
German
Published 12.07.2023
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
Bibliography:Application Number: EP20200722790