MONOLITHIC SEMICONDUCTOR DEVICE AND HYBRID SEMICONDUCTOR DEVICE

A monolithic semiconductor device includes: a substrate (11); a first nitride semiconductor layer (102) disposed on the substrate (11); a second nitride semiconductor layer (103) disposed on the first nitride semiconductor layer (102) and having a band gap larger than a band gap of the first nitride...

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Bibliographic Details
Main Authors MOTOYOSHI, Kaname, KAMITANI, Masatoshi
Format Patent
LanguageEnglish
French
German
Published 09.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A monolithic semiconductor device includes: a substrate (11); a first nitride semiconductor layer (102) disposed on the substrate (11); a second nitride semiconductor layer (103) disposed on the first nitride semiconductor layer (102) and having a band gap larger than a band gap of the first nitride semiconductor layer (102); a first transistor (12) disposed on the substrate (11) and including the first nitride semiconductor layer (102) and the second nitride semiconductor layer (103), the first transistor (12) being of a high-electron-mobility transistor (HEMT) type for power amplification; and a first bias circuit (20) disposed on the substrate (11) and including a second transistor (21) of the HEMT type disposed outside a propagation path of a radio-frequency signal inputted to the first transistor (12), the first bias circuit (20) applying bias voltage to a gate of the first transistor (12).
Bibliography:Application Number: EP20200784869