TUNGSTEN OXIDE SPUTTERING TARGET

• Main Authors: UMEMOTO, Keita, KAWAMURA, Shiori, IO, Kensuke, YAMAGUCHI, Go
• Format: Patent
• Language: English; French; German
• Published: 16.11.2022
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

A W18O49 peak is confirmed by X-ray diffraction analysis of a sputtering surface and a cross section orthogonal to the sputtering surface, a ratio IS(103)/IS(010) of a diffraction intensity IS(103) of a (103) plane to a diffraction intensity IS(010) of a (010) plane of W18O49 of the sputtering surface is 0.57 or more, a ratio IC(103)/IC(010) of a diffraction intensity IC(103) of the (103) plane to a diffraction intensity IC(010) of the (010) plane of W18O49 of the cross section is 0.38 or less, and an area ratio of the W18O49 phase of a surface parallel to the sputtering surface is 37% or more.