A METHOD FOR FABRICATING AN AVALANCHE PHOTODIODE DEVICE

• Main Authors: Van Campenhout, Joris, Srinivasan, Ashwyn, Absil, Philippe, Verheyen, Peter
• Format: Patent
• Language: English; French; German
• Published: 12.01.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure proposes a method for processing an avalanche photodiode (APD) device, in particular, a separate absorption charge multiplication (SACM) APD device. The method comprises forming a first contact region and a second contact region in a semiconductor layer. Further, the method comprises forming a first mask layer above at least a first region of the semiconductor layer adjacent to the first contact region, and forming a second mask layer above and laterally overlapping the first mask layer. Thereby, a mask window is defined by the first mask layer and the second mask layer, and the first mask layer and/or the second mask layer are formed above a second region of the semiconductor layer adjacent to the second contact region. Further, the method comprises forming a charge region in the semiconductor layer through the mask window, wherein the charge region is formed between the first region and the second region, and comprises forming an absorption region on the first region using the first mask layer.