CHIP, SIGNAL SHIFT CIRCUIT AND ELECTRONIC DEVICE

• Main Authors: PENG, Xingqiang, JIANG, Qimeng, SUN, Chenghao
• Format: Patent
• Language: English; French; German
• Published: 26.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PULSE TECHNIQUE; SEMICONDUCTOR DEVICES

This application discloses a chip and a signal level shifter circuit for use on a mobile terminal such as a charger or an adapter. The chip is co-packaged with a first silicon-based driver die and a second silicon-based driver die that are manufactured by using a BCD technology, and a first gallium nitride die and a second gallium nitride die that are manufactured by using a gallium nitride technology. The first silicon-based driver die is connected to two output terminals of a controller, a first silicon-based circuit is integrated on the first silicon-based driver die, a second silicon-based circuit is integrated on the second silicon-based driver die, and a high-voltage resistant gallium nitride circuit is integrated on the first gallium nitride die. The first silicon-based circuit receives a pulse signal HI output by the controller and transfers the HI to the gallium nitride circuit. The gallium nitride circuit shares an input voltage VB of the second silicon-based circuit and transfers the HI to the second silicon-based circuit. In this way, it can be ensured that a second low-voltage silicon-based driver die manufactured by using a low-voltage BCD technology is not damaged by a high input voltage, thereby reducing costs of the chip.