GALLIUM NITRIDE DEVICE AND DRIVE CIRCUIT THEREOF

• Main Authors: HOU, Zhaozheng, JIANG, Qimeng, HUANG, Boning
• Format: Patent
• Language: English; French; German
• Published: 22.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

This application provides a gallium nitride component and a drive circuit thereof. The gallium nitride component includes: a substrate; a gallium nitride GaN buffer layer formed on the substrate; an aluminum gallium nitride AlGaN barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer. The gate includes a P-doped gallium nitride P-GaN cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P-GaN cap layer. A Schottky contact is formed between the first gate metal and the P-GaN cap layer, and an ohmic contact is formed between the second gate metal and the P-GaN cap layer. In the technical solution provided in this application, the gallium nitride component is a normally-off component, and is conducive to design of a drive circuit. In addition, the gallium nitride component has a hybrid gate structure that includes a Schottky gate and an ohmic gate, so that not only gate leakage currents in a conduction process can be reduced to reduce driving power consumption, but also a large quantity of electron holes can be injected into the AlGaN barrier layer during conduction to optimize a dynamic resistance, thereby improving component reliability.