HIGH VOLTAGE SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRIC FIELD SUPPRESSION

A semiconductor device is provided. The semiconductor device includes an electric field (E-field) suppression layer formed over a termination region. The E-field suppression layer is patterned with openings over metal contact areas. The E-field suppression layer has a thickness such that an electric...

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Bibliographic Details
Main Authors KAPUSTA, Christopher James, STOFFEL, Nancy Cecelia, ARTHUR, Stephen Daley, ESLER, David Richard, YU, Liangchun
Format Patent
LanguageEnglish
French
German
Published 07.09.2022
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Summary:A semiconductor device is provided. The semiconductor device includes an electric field (E-field) suppression layer formed over a termination region. The E-field suppression layer is patterned with openings over metal contact areas. The E-field suppression layer has a thickness such that an electric field strength above the E-field suppression layer is below a dielectric strength of an adjacent material when the semiconductor device is operating at or below a maximum voltage.
Bibliography:Application Number: EP20190897345