METHODS OF FABRICATING HIGH VOLTAGE SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRIC FIELD SUPPRESSION

Methods of fabricating a semiconductor device are provided. The method includes providing a plurality of semiconductor devices. The method further includes disposing a dielectric dry film on the plurality of semiconductor devices, wherein the dielectric dry film is patterned such that openings in th...

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Bibliographic Details
Main Authors KAPUSTA, Christopher James, STOFFEL, Nancy Cecelia, ARTHUR, Stephen Daley, ESLER, David Richard, YU, Liangchun
Format Patent
LanguageEnglish
French
German
Published 20.10.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of fabricating a semiconductor device are provided. The method includes providing a plurality of semiconductor devices. The method further includes disposing a dielectric dry film on the plurality of semiconductor devices, wherein the dielectric dry film is patterned such that openings in the patterned dielectric dry film are aligned with conductive pads of each of the plurality of semiconductor devices.
Bibliography:Application Number: EP20190895018