CAPACITIVE COUPLING IN A DIRECT-BONDED INTERFACE FOR MICROELECTRONIC DEVICES

• Main Authors: HABA, Belgacem, SITARAM, Arkalgud R
• Format: Patent
• Language: English; French; German
• Published: 13.10.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Capacitive couplings in a direct- bonded interface for microelectronic devices are provided. In an implementation, a microelectronic device includes a first die and a second die direct- bonded together at a bonding interface, a conductive interconnect between the first die and the second die formed at the bonding interface by a metal-to-metal direct bond, and a capacitive interconnect between the first die and the second die formed at the bonding interface. A direct bonding process creates a direct bond between dielectric surfaces of two dies, a direct bond between respective conductive interconnects of the two dies, and a capacitive coupling between the two dies at the bonding interface. In an implementation, a capacitive coupling of each signal line at the bonding interface comprises a dielectric material forming a capacitor at the bonding interface for each signal line. The capacitive couplings result from the same direct bonding process that creates the conductive interconnects direct- bonded together at the same bonding interface.