METHOD FOR MANUFACTURING ALUMINUM NITRIDE-BASED TRANSISTOR

The present invention relates to a method of manufacturing an AIN-based transistor. An AIN-based high electron mobility transistor (HEMT) element according to the present invention may use an AlN buffer layer, and include an AlGaN composition change layer inserted into a GaN/AlN interface to remove...

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Bibliographic Details
Main Authors NAM, Ok Hyun, CHOI, Ui Ho
Format Patent
LanguageEnglish
French
German
Published 06.10.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a method of manufacturing an AIN-based transistor. An AIN-based high electron mobility transistor (HEMT) element according to the present invention may use an AlN buffer layer, and include an AlGaN composition change layer inserted into a GaN/AlN interface to remove or suppress a degree of generation of a two-dimensional hole gas (2DHG), thereby decreasing an influence of a coulomb drag on a two-dimensional electron gas (2DEG) layer and improving mobility of a two-dimensional electron gas (2DEG).
Bibliography:Application Number: EP20190890469