HYDROGENATED AMORPHOUS SILICON DETECTOR
The invention refers to a detector based on 3D geometry made from a hydrogenated amorphous silicon substrate. This detector finds application in the detection of ionizing radiation.
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Main Author | |
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Format | Patent |
Language | English French German |
Published |
13.03.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The invention refers to a detector based on 3D geometry made from a hydrogenated amorphous silicon substrate. This detector finds application in the detection of ionizing radiation. |
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Bibliography: | Application Number: EP20190831899 |