HIGH VOLTAGE BLOCKING III-V SEMICONDUCTOR DEVICE

A semiconductor device (100) includes type IV semiconductor base substrate (102), first (104) and second (106) device areas that are electrically isolated from one another, a first region of type III-V semiconductor material (108) formed over the first device area, a second region of type III-V semi...

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Bibliographic Details
Main Authors HEINLE, Jens Ulrich, KIM, Hyeongnam, PANDYA, Bhargav, TADIKONDA, Ramakrishna, VORWERK, Manuel, IMAM, Mohamed
Format Patent
LanguageEnglish
French
German
Published 29.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device (100) includes type IV semiconductor base substrate (102), first (104) and second (106) device areas that are electrically isolated from one another, a first region of type III-V semiconductor material (108) formed over the first device area, a second region of type III-V semiconductor material (110) formed over the second device area, the second region of type III-V semiconductor material being laterally electrically insulated from the first region of type III-V semiconductor material, a first high-electron mobility transistor (112) integrally formed in the first region, and a second high-electron mobility transistor (114) integrally formed in the second region. The first and second high-electron mobility transistors are connected in series. A source terminal (208) of the first high-electron mobility transistor is electrically connected to the first device area. The first device area is electrically isolated from a subjacent intrinsically doped region of the base substrate by a first two-way voltage blocking device (122).
Bibliography:Application Number: EP20210164030