SEMICONDUCTOR DEVICE

A semiconductor device (1) includes: a first electrode (E1) provided on a semiconductor multilayer structure (11); a second electrode (E2) provided on a substrate (21); and a bonding metal layer (30) which bonds the first electrode (E1) and the second electrode (E2) together. The bonding metal layer...

Full description

Saved in:
Bibliographic Details
Main Authors OYA, Mitsuaki, MASAMOTO, Keimei, HAYASHI, Shigeo, HIROKI, Masanori
Format Patent
LanguageEnglish
French
German
Published 05.01.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device (1) includes: a first electrode (E1) provided on a semiconductor multilayer structure (11); a second electrode (E2) provided on a substrate (21); and a bonding metal layer (30) which bonds the first electrode (E1) and the second electrode (E2) together. The bonding metal layer (30) includes a gap (33) inside.
Bibliography:Application Number: EP20190895065