SEMICONDUCTOR DEVICE
A semiconductor device (1) includes: a first electrode (E1) provided on a semiconductor multilayer structure (11); a second electrode (E2) provided on a substrate (21); and a bonding metal layer (30) which bonds the first electrode (E1) and the second electrode (E2) together. The bonding metal layer...
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Main Authors | , , , |
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Format | Patent |
Language | English French German |
Published |
05.01.2022
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device (1) includes: a first electrode (E1) provided on a semiconductor multilayer structure (11); a second electrode (E2) provided on a substrate (21); and a bonding metal layer (30) which bonds the first electrode (E1) and the second electrode (E2) together. The bonding metal layer (30) includes a gap (33) inside. |
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Bibliography: | Application Number: EP20190895065 |