POWER SEMICONDUCTOR MODULE WITH INTEGRATED SURGE ARRESTER

A power semiconductor module includes a plurality of power semiconductor chips. A housing accommodates the power semiconductor chips. A first module electrode on a first side of the housing electrically is connected to a first chip electrode of the power semiconductor chips. A second module electrod...

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Bibliographic Details
Main Authors WEISS, David, DUERR, Mathias, FUCHS, Stefan
Format Patent
LanguageEnglish
French
German
Published 21.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A power semiconductor module includes a plurality of power semiconductor chips. A housing accommodates the power semiconductor chips. A first module electrode on a first side of the housing electrically is connected to a first chip electrode of the power semiconductor chips. A second module electrode on a second side of the housing electrically is connected to a second chip electrode. A surge arrester arrangement with a surge arrester is accommodated in the housing such that a first electrode of the surge arrester arrangement is provided at the first side of the housing and a second electrode of the surge arrester arrangement is provided at the second side of the housing. The power semiconductor chips are arranged in an annular region in the housing and the surge arrester arrangement is arranged within the annular region.
Bibliography:Application Number: EP20200736716