DIELECTRIC MOLDED INDIUM BUMP FORMATION AND INP PLANARIZATION

The disclosed technique may be used to electrically and physically connect semiconductor wafers. The wafer may utilize a thick dielectric. Indium bumps may be deposited and patterned in a dielectric film with a small diameter, tall height and substantially uniform in size and shape. The indium can b...

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Bibliographic Details
Main Authors ETTENBERG, Martin, H, LANGE, Michael
Format Patent
LanguageEnglish
French
German
Published 16.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The disclosed technique may be used to electrically and physically connect semiconductor wafers. The wafer may utilize a thick dielectric. Indium bumps may be deposited and patterned in a dielectric film with a small diameter, tall height and substantially uniform in size and shape. The indium can be melted to create small grain size and uniform height bumps. The dielectric film may feature trenches around the indium bumps to prevent shorting of pixels when pressed together.
Bibliography:Application Number: EP20190796697