METHOD AND DEVICE FOR FORMING A COATING AND SUBSTRATE COMPRISING SAME

• Main Authors: Leone, Stefano, Wiegert, Joachim, Manz, Christian, Menner, Hanspeter, Ligl, Jana
• Format: Patent
• Language: English; French; German
• Published: 17.03.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Die Erfindung betrifft ein Verfahren zur Herstellung einer Schicht auf einem Substrat durch metallorganische Gasphasenepitaxie, die mindestens eine Verbindungen der Formel M1aM21-aN enthält oder daraus besteht, wobei M1 für ein Element der Gruppe 13 des Periodensystems der Elemente und M2 für ein Element der Gruppe 3 oder der Gruppe der Actinoide oder der Gruppe der Lanthanoide des Periodensystems der Elemente stehen und 0,01 ≤ a < 0,99 gewählt ist, wobei ein erster Prekursor mit einem Molarfluss (ṅ) von mindestens 10-6 mol/min in eine Reaktionskammer (1) für die metallorganische Gasphasenepitaxie geleitet wird, welcher M2 enthält oder daraus besteht. Weiterhin wird eine Vorrichtung zur Durchführung des Verfahrens angegeben und ein nach diesem Verfahren beschichtetes Substrat. A semiconductor layer and a method and an apparatus for its manufacturing are disclosed. The semiconductor layer includes at least one compound of the formula M1aM21-aN, where M1 is selected from group 13 of the periodic table and M2 is selected from the group including scandium, yttrium, erbium, and europium and where the parameter a is selected between 0.01 and 0.99. The method includes supplying a first precursor into a reaction chamber, the first precursor including at least M2 and being supplied to the reaction chamber at a molar flow rate of at least 1·10−6 mol/min by providing the first precursor by means of a first bubbler from which it is evaporated and supplied to the reaction chamber, the temperature of the first bubbler being more than 90° C.