PRECURSOR COMPOUND FOR ATOMIC LAYER DEPOSITION (ALD) AND CHEMICAL VAPOR DEPOSITION (CVD), AND ALD/CVD METHOD USING SAME
The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.
Saved in:
Main Authors | , , , , , |
---|---|
Format | Patent |
Language | English French German |
Published |
07.06.2023
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same. |
---|---|
Bibliography: | Application Number: EP20180915619 |