GALLIUM ARSENIDE CRYSTAL SUBSTRATE

• Main Authors: TAKAYAMA, Hidetoshi, HIGUCHI, Yasuaki, MORISHITA, Masanori, HAGI, Yoshiaki
• Format: Patent
• Language: English; French; German
• Published: 30.12.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A gallium arsenide crystal substrate has a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 µm and not greater than 800 µm and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of silicon is not lower than 3.0 × 1016 cm-3 and not higher than 3.0 × 1019 cm-3, the gallium arsenide crystal substrate has an average dislocation density not lower than 0 cm-2 and not higher than 15000 cm-2, and when an atomic concentration of carbon is not lower than 1.0 × 1015 cm-3 and not higher than 5.0 × 1017 cm-3, the gallium arsenide crystal substrate has an average dislocation density not lower than 3000 cm-2 and not higher than 20000 cm-2.