METHOD FOR GROUP V DOPING OF AN ABSORBER LAYER IN PHOTOVOLTAIC DEVICES
According to the embodiments provided herein, a method for doping an absorber layer can include contacting the absorber layer with an annealing compound. The annealing compound can include cadmium chloride and a group V salt comprising an anion and a cation. The anion, the cation, or both can includ...
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Main Authors | , , , |
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Format | Patent |
Language | English French German |
Published |
15.03.2023
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Subjects | |
Online Access | Get full text |
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Summary: | According to the embodiments provided herein, a method for doping an absorber layer can include contacting the absorber layer with an annealing compound. The annealing compound can include cadmium chloride and a group V salt comprising an anion and a cation. The anion, the cation, or both can include a group V element. The method can include annealing the absorber layer, whereby the absorber layer is doped with at least a portion of the group V element of the annealing compound. |
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Bibliography: | Application Number: EP20190703820 |