METHOD OF FORMING COPPER ALLOY SPUTTERING TARGETS WITH REFINED SHAPE AND MICROSTRUCTURE

• Main Authors: ALFORD, Frank C, TURNER, Erik L, UNDERWOOD, Patrick, FERRASSE, Stephane, NOLANDER, Ira G
• Format: Patent
• Language: English; French; German
• Published: 09.12.2020
• Subjects: AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKINGWITHOUT ESSENTIALLY REMOVING MATERIAL; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES,OTHERWISE THAN BY ROLLING; MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL; METALLURGY; PERFORMING OPERATIONS; PUNCHING METAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

A method of forming a copper manganese sputtering target including subjecting a copper manganese billet to a first unidirectional forging step, heating the copper manganese billet to a temperature from about 650° C. to about 750° C., subjecting the copper manganese billet to a second unidirectional forging step, and heating the copper manganese billet to a temperature from about 500° C. to about 650° C. to form a copper alloy.