HYDRIDE ENHANCED GROWTH RATES IN HYDRIDE VAPOR PHASE EPITAXY

Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of materials grown by hydride vapor phase epitaxy (HVPE).

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Bibliographic Details
Main Authors PTAK, Aaron Joseph, SIMON, John David, SCHULTE, Kevin Louis
Format Patent
LanguageEnglish
French
German
Published 25.11.2020
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CABLES
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY
CHEMISTRY
CONDUCTORS
CRYSTAL GROWTH
ELECTRICITY
INSULATORS
METALLURGY
PERFORMING OPERATIONS
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
THEIR RELEVANT APPARATUS
TRANSPORTING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of materials grown by hydride vapor phase epitaxy (HVPE).
Bibliography:Application Number: EP20190738729