A SILICON GERMANIUM-ON-INSULATOR STRUCTURE

A multilayer structure comprising: a silicon-on-insulator substrate comprising (i) a single crystal semiconductor handle layer, (ii) a dielectric layer in interfacial contact with the front surface of the single crystal semiconductor handle layer, and (iii) a silicon layer in interfacial contact wit...

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Bibliographic Details
Main Authors THOMAS, Shawn G, WANG, Gang
Format Patent
LanguageEnglish
French
German
Published 18.11.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A multilayer structure comprising: a silicon-on-insulator substrate comprising (i) a single crystal semiconductor handle layer, (ii) a dielectric layer in interfacial contact with the front surface of the single crystal semiconductor handle layer, and (iii) a silicon layer in interfacial contact with the dielectric layer, wherein the silicon layer comprises a hydride-terminated surface; a first silicon germanium layer in interfacial contact with the hydride-terminated surface of the silicon layer, wherein the first silicon germanium layer comprises silicon and germanium and has a formula of SixGe1-x, wherein x is between about 0.2 and about 0.8, molar ratio; and a second silicon germanium layer in interfacial contact with the first silicon germanium layer, wherein the second silicon germanium layer comprises silicon and germanium and has a formula SiyGe1-y, wherein y is between about 0.3 and about 0.9, molar ratio.
Bibliography:Application Number: EP20200180941