COMPOSITION FOR POLISHING FOR USE IN ELIMINATING PROTRUSION IN PERIPHERY OF LASER MARK

• Main Authors: ISHIMIZU, Eiichiro, TANATSUGU, Yusuke
• Format: Patent
• Language: English; French; German
• Published: 25.08.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

There is provided a polishing composition used in a wafer polishing process for eliminating a protrusion around a laser mark, and a polishing method using the polishing composition.A polishing composition for eliminating a protrusion around a laser mark on a laser mark-provided wafer, the polishing composition comprising a water-soluble compound, a chelating agent, and metal oxide particles, and having a pH of 7 to 12, wherein the water-soluble compound has a hydrophobic moiety and a hydrophilic moiety; the hydrophilic moiety has, on an end or side chain thereof, a hydroxyl group and a hydroxyethyl group, an acyloxy group, a carboxylic acid group, a carboxylic acid salt group, a sulfonic acid group, or a sulfonic acid salt group; and the water-soluble compound is contained in an amount of 5 to 700 ppm in the polishing composition.The metal oxide particles are silica particles, zirconia particles, or ceria particles contained in a colloidal sol and having an average primary particle diameter of 5 to 100 nm. A wafer polishing method for polishing a protrusion around a laser mark.